Specifications

256Gb MLC HLNAND MCP

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HyperLink NAND2 Flash 256Gb MCP

Introduction

The HLNAND™ Flash device HL7G256G24DBBA-1W is a next-generation Flash memory delivering the most advanced capabilities with high performance for a broad range of Flash applications. HLNAND Flash memory, based on NAND Flash cell technology, provides the most cost-effective solution for mass storage applications.

HL7G256G24DBBA-1W is a 256Gb Flash memory device with a single HyperLink interface and quad memory banks each having two separate LUNs (Logical Units). This device is packaged in an MCP (multi-chip-package),composed of a stack of nine dies, including eight monolithic 32Gb NAND Flash chips, evenly distributed over four banks, and one ASIC interface chip. The interface chip contains the external high-speed HyperLink interface and controls each Flash bank automatically and independently. HL7G256G24DBBA-1W supports an Error Detection Code (EDC) feature to eliminate bit errors in ‘Command Packets’ to ensure reliability and error-free communication of commands and register data. HL7G256G24DBBA-1W provides user configurable virtual pages for read with the various page depth choices, 2048B, 4096B, 8192B and a full page of 8704B.


Features


HLNAND2 MCP w/ 8-NANDs & Interface-Chip

• Fully Compliant HyperLink Interface
HL2-533/HL2-667/HL2-800
• Simultaneous Read & Write operations
• Supports Error Detection Code (EDC) for
Command Packets & Register Read Packets
• Broadcast Status Register Read Command
• Sustained Read/Write Throughput up to
800MB/s
• Source Synchronous Clocking (CK and CK#)
• On-the-Fly User Configurable Data Read Virtual
Page Sizes (2048, 4096, 8192 or 8704 Bytes)
• Highly Flexible Modular Command Structure
• Bank-Oriented Memory Architecture
• Quad Bank with Dual LUN Architecture
• Supports Concurrent Multi Bank Operations
• Supports Two-LUN per Bank Operations
• Supports Two-Plane per LUN Operations
• Scalable Memory Capacity
• Broadcasting Commands
• Daisy-chain cascade up to 255 number of linked
devices to increase memory capacity with
undiminished data throughput
• JEDEC Standard 1.2V, HSUL_12 Interface
• Power Supply
– VCC & VCCQ = 1.2V (HL2 Bridge Chip Logic)
– VCCN & VCCNQ = 3.3V (NAND Flash)
• Organization
– Page Size: (8K + 512) Bytes
– Block Size: 128 Pages = (1M + 64K) Bytes
– Bank Size: 8304 Blocks = (8G + 512M) Bytes
– Device Size: 4 Banks = (32G + 2G) Bytes
• Package
– 100-Ball BGA (18 x 14 / 1.0mm pitch)


Documents


Product Brief


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